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| (R) DMV1500M DAMPER + MODULATION DIODE FOR VIDEO Table 1: Main Product Characteristics IF(AV) VRRM trr (max) VF (max) DAMPER 6A 1500 V 135 ns 1.65V MODUL. 3A 600 V 50 ns 1.4 V DAMPER MODULATION 1 2 3 FEATURES AND BENEFITS Full kit in one package High breakdown voltage capability Very fast recovery diode Specified turn on switching characteristics Low static and peak forward voltage drop for low dissipation Insulated version: Insulated voltage = 2000 VRMS Capacitance = 7 pF Planar technology allowing high quality and best electrical characteristics Outstanding performance of well proven DTV as damper and new faster Turbo 2 600V technology as modulation 1 2 3 TO-220FPAB DMV1500MFD 2 1 3 DESCRIPTION High voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with E/W correction. The insulated TO-220FPAB package includes both the DAMPER diode and the MODULATION diode, thanks to a dedicated design. Assembled on automated line, it offers very low dispersion values on insulating and thermal performances. Table 2: Order Codes Part Number DMV1500MFD DMV1500MFD5 Marking DMV1500M DMV1500M TO-220FPAB F5 Bending DMV1500MFD5 (optional) September 2004 REV. 1 1/8 DMV1500M Table 3: Absolute Maximum Ratings Symbol VRRM IFSM Tstg Tj Parameter Repetitive peak reverse voltage Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10ms sinusoidal Value Damper Modul. 1500 75 150 600 35 Unit V A C C -40 to +150 Table 4: Thermal Resistance Symbol Rth(j-c) Parameter Junction to case thermal resistance Value 3.7 Unit C/W Table 5: Static Electrical Characteristics Value Symbol Parameter Test conditions Damper Modulation Damper Modulation VR = 1500 V VR = 600 V IF = 6 A IF = 3 A 1.4 Tj = 25C Typ. IR * VF ** Pulse test: Tj = 125C Typ. 100 3 1.2 1.1 Max. 1000 50 1.65 1.4 Unit Max. 100 20 2.2 1.8 Reverse leakage current A Forward voltage drop * tp = 5 ms, < 2% V ** tp = 380 s, < 2% To evaluate the maximum conduction losses of the DAMPER and MODULATION diodes use the following equations : DAMPER: P = 1.37 x IF(AV) + 0.047 x IF (RMS) MODULATION: P = 1.12 x IF(AV) + 0.092 x IF (RMS) 2 2 Table 6: Recovery Characteristics Value Symbol Parameter Test conditions IF = 100mA IR =100mA IRR = 10mA IF = 1A dIF/dt = -50 A/s VR =30V Damper Typ. Tj = 25C 750 Max. Modul. Typ. 110 Max. 350 ns Tj = 25C 110 135 35 50 Unit trr Reverse recovery time 2/8 DMV1500M Table 7: Turn-On Switching Characteristics Symbol Parameter Test conditions IF = 6 A dIF/dt = 80 A/s VFR = 3 V IF = 3 A dIF/dt = 80 A/s VFR = 2 V IF = 6 A dIF/dt = 80 A/s IF = 3 A dIF/dt = 80 A/s Value Typ. Tj = 100C 570 Max. Unit Forward recovery time tfr Damper ns Modul. Tj = 100C 240 Peak forward voltage VFP Damper Modul. Tj = 100C Tj = 100C 21 28 8 V Figure 1: Power dissipation versus peak forward current (triangular waveform, =0.45) PF(AV)(W) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 MODULATION diode DAMPER diode Figure 2: Average forward current versus ambient temperature IF(AV)(A) 7 Rth(j-a)=Rth(j-c) 6 5 4 Rth(j-a)=Rth(j-c) DAMPER diode 3 2 1 MODULATION diode 0.8 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 T IP(A) 0 0 =tp/T 25 tp 50 Tamb(C) 75 100 125 150 Figure 3: Forward voltage drop versus forward current (damper diode) IFM(A) 15 Tj=125C (maximum values) Figure 4: Forward voltage drop versus forward current (modulation diode) IFM(A) 10 9 8 Tj=125C (maximum values) 10 7 Tj=125C (typical values) 6 5 4 Tj=125C (typical values) 5 Tj=25C (maximum values) 3 2 Tj=25C (maximum values) VFM(V) 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VFM(V) 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3/8 DMV1500M Figure 5: Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 10 0.2 0.1 0.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 5 IM t Figure 6: Non repetitive peak forward current versus overload duration (damper diode) IM(A) 40 35 DAMPER diode 30 25 TC=25C MODULATION diode 20 15 TC=75C TC=125C tp(s) Single pulse =0.5 t(s) 1.E-02 1.E-01 1.E+00 0 1.E-03 Figure 7: Non repetitive peak forward current versus overload duration (modulation diode) IM(A) 30 Figure 8: Reverse recovery charges versus dIF/dt (damper diode) Qrr(nC) 1000 900 IF=IP Tj=125C 90% confidence 25 800 700 TC=25C 20 600 500 15 TC=75C 400 300 10 IM TC=125C t 5 =0.5 200 100 0 t(s) 1.E-02 1.E-01 1.E+00 dIF/dt(A/s) 0.1 1.0 10.0 0 1.E-03 Figure 9: Reverse recovery charges versus dIF /dt (modulation diode) Qrr(nC) 200 IF=IP Tj=125C 90% confidence Figure 10: Peak reverse recovery current versus dIF/dt (damper diode) IRM(A) 2.0 1.8 1.6 IF=IP Tj=125C 90% confidence 150 1.4 1.2 100 1.0 0.8 0.6 50 0.4 0.2 0.0 0.1 1.0 10.0 100.0 0.1 1.0 10.0 dIF/dt(A/s) 0 dIF/dt(A/s) 4/8 DMV1500M Figure 11: Peak reverse recovery current versus dIF/dt (modulation diode) IRM(A) 6.0 IF=IP Tj=125C 90% confidence Figure 12: Transient peak forward voltage versus dIF/dt (damper diode) VFP(V) 40 35 30 IF=IP Tj=125C 90% confidence 5.0 4.0 25 3.0 20 15 2.0 10 1.0 5 dIF/dt(A/s) 0.0 1 10 100 1000 0 0 20 40 dIF/dt(A/s) 60 80 100 120 140 Figure 13: Transient peak forward voltage versus dIF/dt (modulation diode) VFP(V) 12 11 10 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 180 200 IF=IP Tj=125C 90% confidence Figure 14: Forward recovery time versus dIF/dt (damper diode) tfr(ns) 800 750 700 650 600 550 500 450 IF=IP Tj=125C VFR=3V 90% confidence dIF/dt(A/s) 400 0 20 40 dIF/dt(A/s) 60 80 100 120 140 Figure 15: Forward recovery time versus dIF/dt (modulation diode) tfr(ns) 200 175 150 IF=IP Tj=125C VFR=2V 90% confidence Figure 16: Relative variation of dynamic parameters versus junction temperature IRM, VFP, QRR [Tj]/ IRM, VFP, QRR [Tj=125C] 1.2 1.0 0.8 125 100 75 0.4 50 0.2 25 0.6 VFP IRM QRR dIF/dt(A/s) 0 0 20 40 60 80 100 120 140 160 180 200 0.0 25 50 Tj(C) 75 100 125 5/8 DMV1500M Figure 17: Junction capacitance versus reverse voltage applied (typical values) C(pF) 100 F=1MHz VOSC=30mVRMS Tj=25C DAMPER diode or MODULATION diode 10 VR(V) 1 1 10 100 1000 Figure 18: TO-220FPAB Package Mechanical Data REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.9 0.173 0.192 2.5 2.9 0.098 0.114 2.45 2.75 0.096 0.108 0.4 0.7 0.016 0.027 0.6 1 0.024 0.039 1.15 1.7 0.045 0.067 1.15 1.7 0.045 0.067 4.95 5.2 0.195 0.205 2.4 2.7 0.094 0.106 10 10.7 0.393 0.421 16 Typ. 0.630 Typ. 28.6 30.6 1.126 1.205 9.8 10.7 0.385 0.421 15.8 16.4 0.622 0.646 9 9.9 0.354 0.390 2.9 3.5 0.114 0.138 A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Dia. 6/8 DMV1500M Figure 19: TO-220FPAB F5 Bending (option) Package Mechanical Data REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.9 0.173 0.192 2.5 2.9 0.098 0.114 2.45 2.75 0.096 0.108 0.4 0.7 0.016 0.027 0.6 1 0.024 0.039 1.15 1.7 0.045 0.067 1.15 1.7 0.045 0.067 4.95 5.2 0.195 0.205 2.4 2.7 0.094 0.106 10 10.7 0.393 0.421 16 Typ. 0.630 Typ. 24.16 26.9 0.951 1.059 1.65 2.41 0.065 0.095 15.8 16.4 0.622 0.646 9 9.9 0.354 0.390 2.92 3.3 0.115 0.130 1.4 Typ. 0.055 Typ. 2.9 3.5 0.114 0.138 A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 M1 R Dia. Table 8: Ordering Information Part Number DMV1500MFD DMV1500MFD5 Marking DMV1500M DMV1500M Package TO-220FPAB TO-220FPAB F5 Weight 2.4 g 2.4 g Base qty 50 45 Delivery mode Tube Tube Table 9: Revision History Date 07-Sep-2004 Revision 1 Description of Changes First issue 7/8 DMV1500M Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8 |
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